SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR MADE BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

NAROZNY, P

DAMBKES, H

KIBBEL, H

KASPER, E

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2363 / 2366

页数：4

共 13 条

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[7] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J].

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[8] GA0.72AL0.28AS/GA0.99BE0.01AS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

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