GA0.72AL0.28AS/GA0.99BE0.01AS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

LIEVIN, JL

DUBONCHEVALLIER, C

ALEXANDRE, F

LEROUX, G

DANGLA, J

ANKRI, D

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：129 / 131

页数：3

共 10 条

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ELECTRONICS LETTERS, 1985, 21 (14) :614-615

[3]

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[6]

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[7] ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY [J].

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ELECTRONICS LETTERS, 1985, 21 (10) :413-414

[8]

LIEVIN JL, I PHYS C SER, V74, P403

[9] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J].

MALIK, RJ ;

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APPLIED PHYSICS LETTERS, 1985, 46 (06) :600-602

[10] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J].

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