SUPER-GAIN SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS

被引：22

作者：

GREEN, MA

GODFREY, RB

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：225 / 227

页数：3

共 15 条

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[6]

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[7]

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[8] TUNNEL TRANSISTOR [J].

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[9] THE STRUCTURE OF ULTRATHIN OXIDE ON SILICON [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (04) :392-394

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

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