TECHNIQUE FOR SELECTIVE ETCHING OF SI WITH RESPECT TO GE

被引：17

作者：

BRIGHT, AA

IYER, SS

ROBEY, SW

DELAGE, SL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期

关键词：

D O I：

10.1063/1.100269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2328 / 2329

页数：2

共 8 条

[1]

ARBSTREITER G, 1985, PHYS REV LETT, V54, P2441

[2]

IYER SS, 1987, P INT EL DEV M IEDM, V87, P874

[3]

LEGOUES FK, 1988, MATER RES SOC S P, V103, P185

[4] REACTIVE ION ETCHING RELATED SI SURFACE RESIDUES AND SUBSURFACE DAMAGE - THEIR RELATIONSHIP TO FUNDAMENTAL ETCHING MECHANISMS [J].

OEHRLEIN, GS ;

LEE, YH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1585-1594

[5]

PATTON GL, 1987, MATER RES SOC S P, V102, P295

[6] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC ;

LANG, DV ;

SERGENT, AM ;

STORMER, HL ;

WECHT, KW ;

LYNCH, RT ;

BALDWIN, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

[7] PHOTOEMISSION INVESTIGATION OF GE AND SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING [J].

ROBEY, SW ;

BRIGHT, AA ;

OEHRLEIN, GS ;

IYER, SS ;

DELAGE, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1650-1656

[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J].

TEMKIN, H ;

PEARSALL, TP ;

BEAN, JC ;

LOGAN, RA ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :963-965

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