Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

被引：22

作者：

Kim, Tae Whan ^{[1
]}

Shin, Jae Won

Lee, Jeong Yong

Jung, Jae Hun

Lee, Jung Wook

Choi, Won Kook

Jin, Sungho

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea

[4] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea

[5] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期

关键词：

D O I：

10.1063/1.2450650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.

引用

页数：3

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