Proton radiation effects in nitride lasers and light emitting diodes

被引：9

作者：

Gonda, Shun-ichi

Tsutsumi, Hiroyuki

Ito, Yoshiumi

Mukai, Takashi

Nagahama, Shin-ichi

机构：

[1] Fukui Univ Technol, Fukui 9108505, Japan

[2] Wakasawan Energy Res Ctr, Tsuruga, Fukui 9140192, Japan

[3] Nichia Corp, Tokushima 7740044, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 01期

关键词：

D O I：

10.1002/pssa.200673514

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitride laser diodes and light emitting diodes were irradiated with 200-, 80- and 10-MeV protons. The threshold current of violet laser diodes increased with increasing proton fluence to 1 X 10(14) p/cm(2). The increase in threshold current is considerably small compared with that of AlGaAs laser diodes. Proton energy dependence of the change of threshold current was a little bit different from that of GaN NIEL. Oscillation wavelength did not change before and after irradiation. The defect levels made by proton irradiation do not seem to be radiative recombination centers. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：231 / 235

页数：5

共 7 条

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