Spectroscopic ellipsometry study of Zn1-xMgxO thin films deposited on Al2O3(0001)

被引：73

作者：

Kang, JH ^{[1
]}

Park, YR ^{[1
]}

Kim, KJ ^{[1
]}

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 03期

关键词：

semiconductors; thin films; optical properties;

D O I：

10.1016/S0038-1098(00)00150-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zn1-xMgxO (x less than or equal to 0.21) thin films were prepared on (0001)-oriented sapphire (Al2O3) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with increasing substrate temperature in the 200-500 degrees C range. The Mg composition of the films increases with increasing substrate temperature. The pseudodielectric functions of the films measured at room temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn1-xMgxO shifts to higher energies with increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x = 0.21 alloy from that of ZnO is estimated to be 400 meV. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：127 / 130

页数：4

共 13 条

[1] Optically pumped lasing of ZnO at room temperature [J].