Refractive indices and absorption coefficients of MgxZn1-xO alloys

被引：198

作者：

Teng, CW

Muth, JF ^{[1
]}

Ozgür, U

Bergmann, MJ

Everitt, HO

Sharma, AK

Jin, C

Narayan, J

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] Duke Univ, Dept Phys, Durham, NC 27708 USA

[3] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indices of refraction for MgxZn1-xO epitaxial films grown by pulsed-laser deposition on sapphire substrates with x up to 0.36 were determined in the range of wavelength 457-968 nm by analysis of optical transmission spectra and prism-coupled waveguide measurements. The dispersion follows the first-order Sellmeier dispersion equation. Absorption coefficients, exciton energy gaps, and binding energies of MgxZn1-xO alloys were determined by transmission spectroscopy. The excitonic absorption features were clearly visible at room temperature despite alloy broadening. These results provide important information for the design and modeling of ZnO/MgZnO heterostructure optoelectronic devices. (C) 2000 American Institute of Physics. [S0003-6951(00)01408-X].

引用

页码：979 / 981

页数：3

共 24 条

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