Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N

被引：17

作者：

Malikova, L

Huang, YS

Pollak, FH

Feng, ZC

Schurman, M

Stall, RA

机构：

[1] CUNY BROOKLYN COLL, NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M, BROOKLYN, NY 11210 USA

[2] EMCORE CORP, SOMERSET, NJ 08873 USA

[3] NATL TAIWAN INST TECHNOL, DEPT ELECT ENGN, TAIPEI 10772, TAIWAN

[4] CUNY GRAD SCH & UNIV CTR, NEW YORK, NY 10036 USA

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1098(97)00160-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the temperature dependence of the A, B and C excitonic transitions associated with the direct gap of wurtzite Ga0.95Al0.05N in the temperature range 16 K < T < 434 K using contactless electroreflectance. The parameters that describe the temperature variation of both the energies and broadening functions of the band gaps have been evaluated. The exiton-LO phonon coupling constant has been determined from an analysis of the latter quantities. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：273 / 278

页数：6

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