INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE

被引:780
作者
LAUTENSCHLAGER, P
GARRIGA, M
LOGOTHETIDIS, S
CARDONA, M
机构
来源
PHYSICAL REVIEW B | 1987年 / 35卷 / 17期
关键词
D O I
10.1103/PhysRevB.35.9174
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:9174 / 9189
页数:16
相关论文
共 113 条
[1]  
Alibert C., 1983, Journal de Physique Colloque, V44, P229, DOI 10.1051/jphyscol:19831048
[2]  
ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479
[3]   THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES [J].
ALLEN, PB ;
HEINE, V .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2305-2312
[4]   THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].
ALLEN, PB ;
CARDONA, M .
PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505
[5]   TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF SI AND GE [J].
ALLEN, PB ;
CARDONA, M .
PHYSICAL REVIEW B, 1983, 27 (08) :4760-4769
[6]   SOLIDS WITH THERMAL OR STATIC DISORDER .1. ONE-ELECTRON PROPERTIES [J].
ALLEN, PB .
PHYSICAL REVIEW B, 1978, 18 (10) :5217-5224
[7]   SUBSTITUTIONAL DONORS AND CORE EXCITONS IN MANY-VALLEY SEMICONDUCTORS [J].
ALTARELLI, M .
PHYSICAL REVIEW LETTERS, 1981, 46 (03) :205-208
[8]   ALPHA 3- ALPHA 1 TRANSITIONS IN GE AND CDTE - METAMORPHISM AND QUASI BOUND STATES [J].
ANTOCI, S ;
REGUZZONI, E ;
SAMOGGIA, G .
SOLID STATE COMMUNICATIONS, 1971, 9 (13) :1081-+
[9]  
Aspnes D. E., 1973, Optics Communications, V8, P222, DOI 10.1016/0030-4018(73)90132-6
[10]   DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060