Simple interpretation of metal/wurtzite-GaN barrier heights

被引:38
作者
Bermudez, VM [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1063/1.370861
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of the Cowley-Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density of surface states in the band gap. It is suggested that, in the context of this model, such barrier heights can be expressed largely as a sum of the "bare-surface barrier height" (i.e., the band bending before contact formation) and a Mott-Schottky term. (C) 1999 American Institute of Physics. [S0021-8979(99)02414-7].
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页码:1170 / 1171
页数:2
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