Interface characterization of nanosized B-doped Si3N4/SiC ceramics

被引：85

作者：

Jalowiecki, A ^{[1
]}

Bill, J ^{[1
]}

Aldinger, F ^{[1
]}

Mayer, J ^{[1
]}

机构：

[1] UNIV STUTTGART, INST NICHTMET ANORGAN MAT, D-70569 STUTTGART, GERMANY

来源：

COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING | 1996年 / 27卷 / 09期

关键词：

polymer pyrolysis; nanostructured Si3N4/SiC composites; transmission electron microscopy;

D O I：

10.1016/1359-835X(96)00004-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent results on the crystallization behaviour of nanosized boron-doped silicon carbonitride ceramics as revealed by structural characterization with various transmission electron microscopy methods are described. Ceramic composites in the quaternary system Si-C-N-B were produced by polymer pyrolysis of doped polysilazanes without the presence of oxide sintering additives. Annealing at elevated temperatures induces the crystallization of the initially amorphous materials, resulting in a microstructure consisting of nanocrystalline Si3N4, SiC and turbostratic BN(C). Attention is focused on the BN(C) interface layers and the lattice structure of the small-scaled crystallites in these nanocrystalline ceramics.

引用

页码：717 / 721

页数：5

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