Enhanced thermoelectric figure-of-merit in spark plasma sintered nanostructured n-type SiGe alloys

被引：141

作者：

Bathula, Sivaiah ^{[1
,2
]}

Jayasimhadri, M. ^{[2
]}

Singh, Nidhi ^{[1
]}

Srivastava, A. K. ^{[1
]}

Pulikkotil, Jiji ^{[1
]}

Dhar, Ajay ^{[1
]}

Budhani, R. C. ^{[1
]}

机构：

[1] Natl Phys Lab, CSIR, CSIR Network, Inst Solar Energy, New Delhi 110012, India

[2] Delhi Technol Univ, Dept Appl Phys, Delhi, India

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

关键词：

THERMAL-CONDUCTIVITY;

D O I：

10.1063/1.4768297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a significant enhancement in the thermoelectric figure-of-merit of phosphorous doped nanostructured n-type Si80Ge20 alloys, which were synthesized employing high energy ball milling followed by rapid-heating using spark plasma sintering. The rapid-heating rates, used in spark plasma sintering, allow the achievement of near-theoretical density in the sintered alloys, while retaining the nanostructural features introduced by ball-milling. The nanostructured alloys display a low thermal conductivity (2.3W/mK) and a high value of Seebeck coefficient (-290 mu V/K) resulting in a significant enhancement in ZT to about 1.5 at 900 degrees C, which is so far the highest reported value for n-type Si80Ge20 alloys. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768297]

引用

页数：5

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