Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry:: Substrate interfacial reactivity

被引:66
作者
Losurdo, M
Giangregorio, M
Capezzuto, P
Bruno, G
De Rosa, R
Roca, F
Summonte, C
Plá, J
Rizzoli, R
机构
[1] CNR, Plasma Chem Res Ctr, I-70126 Bari, Italy
[2] ENEA Portici, CR, I-80055 Naples, Italy
[3] CNR, Lamel Inst, I-40129 Bologna, Italy
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2002年 / 20卷 / 01期
关键词
D O I
10.1116/1.1421596
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, C-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements. (C) 2002 American Vacuum Society.
引用
收藏
页码:37 / 42
页数:6
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