Deposition of transparent and conducting indium-tin-oxide films by the r.f.-superimposed DC sputtering technology

被引：71

作者：

Bender, M

Trube, J

Stollenwerk, J

机构：

[1] Tech Univ Darmstadt, Inst Angew Phys, D-64287 Darmstadt, Germany

[2] Balzers Prozess Syst GmbH, D-63755 Alzenau, Germany

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

关键词：

sputtering; indium tin oxide; electrical properties; electrical measurements; optical properties;

D O I：

10.1016/S0040-6090(99)00558-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the r.f.-superimposed DC-magnetron sputtering process transparent and conducting indium-tin-oxide (ITO) films were deposited. The optical, electrical and structural properties of films deposited with different process parameters were investigated. It was shown that ITO-films sputtered with the r.f.-superimposed DC-magnetron gas discharge have resistivities that are much lower than the resistivities of ITO-films deposited with the common DC-gas discharge. This behaviour is due to a different crystal structure of ITO-films sputtered with a r.f.-assisted gas discharge. At a substrate temperature of 200 degrees C specific resistivities of less than 150 mu Omega cm were achieved for a gas discharge that was excited by 50% r.f.-power and 50% DC-power. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：100 / 105

页数：6

共 25 条

[1] Dependence of oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films [J].