Effect of deposition temperature and composition on the microstructure and electrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

被引：29

作者：

Nukaga, N ^{[1
]}

Ishikawa, K ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 9B期

关键词：

SBT; trimethyl bismuth; strontium bis-hexamethoxy tantalate; MOCVD; step coverage;

D O I：

10.1143/JJAP.38.5428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrBi2Ta2O9 (SBT) thin films were prepared by conventional thermal metalorganic chemical vapor deposition (MOCVD) and subsequent heat treatment. The SBT film deposited at 500 degrees C had a smoother surface and better step coverage than that deposited at 750 degrees C. The degree of step coverage deposited at 500 degrees C was 0.82. An almost single phase of SBT was obtained for the film with a Bi/Ta mole ratio of 1.0 by heat treatment at 750 degrees C for 30 min in O-2 atmosphere after MOCVD deposition at 500 degrees C, 2P(r) and E-C at an applied electric field of 620 kV/cm were 12.2 mu C/cm(2) and 87 kV/cm, respectively, when the film was deposited at 500 degrees C followed by heat treatment at 800 degrees C for 30 min in O-2 atmosphere, and its Bi/Ta ratio was 1.2.

引用

页码：5428 / 5431

页数：4

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