Preparation of SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition from two new liquid organometallic sources

被引：32

作者：

Funakubo, H ^{[1
]}

Nukaga, N ^{[1
]}

Ishikawa, K ^{[1
]}

Watanabe, T ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 2B期

关键词：

strontium barium tantalum oxide; trimethyl bismuth; strontium bis-hexaethoxy tantalate; metalorganic chemical vapor deposition;

D O I：

10.1143/JJAP.38.L199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrBi2Ta2O9 thin films were prepared with high compositional reproducibility by metaloganic chemical vapor deposition (MOCVD) using Bi(CH3)(3), Sr[Ta(O . C2H5)(6)](2) and O-2 as source materials. When the deposition temperature was increased, the Bi/Ta and Sr/Ta ratios in the film increased and decreased, respectively. This behavior can be estimated from the deposition temperature dependence of Bi2O3 and Sr-Ta-O films deposited from Bi(CH3)(3)-O-2 and Sr[Ta(O . C2H5)(6)](2)-O-2 systems, respec tively. Bi/Ta ratio can be controlled by the input gas concentration ratio of Bi(CH3)(3) to Sr[Ta(O . C2H5)(6)](2) at 600 degrees C. On the other hand, Sr/Ta ratio was independent of the input gas concentration. An almost single phase of SrBi2Ta2O9 was deposited at 670 degrees C. The remanent polarization and the coercive field of the film deposited at 670 degrees C following heat treatment at 750 degrees C for 30 min in O-2 atmosphere were 5.0 mu C/cm(2) and 80 kV/cm, respectively.

引用

页码：L199 / L201

页数：3

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