Residual strain and crystal structure of BaTiO3-SrTiO3 thin films prepared by metal organic chemical vapor deposition

被引：27

作者：

Funakubo, H ^{[1
]}

Nagano, D ^{[1
]}

Saiki, A ^{[1
]}

Inagaki, Y ^{[1
]}

Shinozaki, K ^{[1
]}

Mizutani, N ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, FAC ENGN, DEPT INORGAN MAT, MEGURO KU, TOKYO 152, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 9B期

关键词：

barium titanium oxide; strontium titanium oxide; lattice parameter; metal organic chemical vapor deposition; residual strain;

D O I：

10.1143/JJAP.36.5879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice parameters of BaTiO3-SrTiO3 films prepared by chemcal vapor deposition (CVD) were investigated. When the film thickness was 1500 nm, the lattice parameters were mainly determined by the thermal stress due to the thermal expansion difference between the film and the substrate. The lattice parameters of epitaxially grown SrTiO3 films on (100)MgO substrates increased with decreasing film thickness; while those of polycrystalline films were independent of the film thickness down to 300nm. They also increased with the Ti/(Sr+Ti) ratio for epitaxially grown 500-nm-thick films, while those of polycrystalline films were independent of Ti/(Sr+Ti) ratio. Large lattice parameters were also observed for the epitaxially grown (Ba0.5Sr0.5)TiO3 film on a (100)MgO substrate but were not observed for the epitaxially grown BaTiO3 him on (100)MgO substrate. These occurrences were closely related to the epitaxial growth of the Blm.

引用

页码：5879 / 5884

页数：6

共 24 条

[1] FERROELECTRIC PROPERTIES IN EPITAXIALLY GROWN BAXSR1-XTIO3 THIN-FILMS [J].