FERROELECTRIC PROPERTIES IN EPITAXIALLY GROWN BAXSR1-XTIO3 THIN-FILMS

被引：194

作者：

ABE, K

KOMATSU, S

机构：

[1] Materials and Devices Research Laboratories, R and D Center, Toshiba Corporation, Saiwaiku, Kawasaki 210, Komukai Toshiba-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Induced ferroelectricity was observed in epitaxially grown Ba xSr1-xTiO3 (BST) thin films with thicknesses of about 220 nm. The BST films with various Ba content were deposited at 600 °C on Pt/MgO substrates, by radio frequency magnetron sputtering with double targets, BaTiO3 and SrTiO3. The epitaxial growth of the BST films was confirmed with x-ray-diffraction and reflection high-energy electron-diffraction analyses. The D-E hysteresis curve and the Curie temperature shift confirmed the BST films with Ba content x≥0.44 had ferroelectricity at room temperature. The mechanism of the ferroelectricity appearance was discussed in relation to the elongation of the c axis in the thickness direction, caused by lattice mismatch between Pt and BST. © 1995 American Institute of Physics.

引用

页码：6461 / 6465

页数：5

共 10 条

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