PREPARATION OF THIN-FILM (BA0.5,SR0.5)TIO3 BY THE LASER-ABLATION TECHNIQUE AND ELECTRICAL-PROPERTIES

被引：83

作者：

YOON, SG

LEE, JC

SAFARI, A

机构：

[1] BELLCORE,RED BANK,NJ 07701

[2] RUTGERS STATE UNIV,DEPT CERAM,PISCATAWAY,NJ 08855

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba0.5,Sr0.5)TiO3 (BST) films deposited on Pt/MgO and YBaCu3O7-x (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600-degrees-C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/mum2 at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 muA/cm2 at an applied electric field of 0.15 MV/cm.

引用

页码：2999 / 3003

页数：5

共 12 条

[1]

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