EXCIMER LASER ABLATED BARIUM STRONTIUM-TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS

被引：145

作者：

ROY, D ^{[1
]}

KRUPANIDHI, SB ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.108793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline thin films of Ba0.5Sr0.5TiO3 Were deposited by excimer laser (248 nm) ablation. Films deposited near 575-degrees-C exhibited good crystallinity, a dielectric constant of 330, a dissipation factor of 0.02, a leakage current density of 2 X 10(-7) A/cm2, a charge storage density of 36 fC/mum2, and breakdown time of 3700 s at an applied electric field of 0.125 MV/cm. The C-V (capacitance-voltage) behavior of both MFM (metal-ferroelectric-metal) and MFS (metal-ferroelectric-semiconductor) structures were studied and the estimated dielectric permittivity in the accumulation region of MFS structure nearly indicated the bulk value, suggesting a reasonably good Ba0.5Sr0.5TiO3/Si interface.

引用

页码：1056 / 1058

页数：3

共 10 条

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