EPITAXIAL-GROWTH OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：23

作者：

GILBERT, SR ^{[1
]}

WESSELS, BW ^{[1
]}

STUDEBAKER, DB ^{[1
]}

MARKS, TJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT CHEM,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 24期

关键词：

D O I：

10.1063/1.113736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.© 1995 American Institute of Physics.

引用

页码：3298 / 3300

页数：3

共 17 条

[1]

[Anonymous], 1994, POWDER DIFFRACTION F

[2] ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED RADIO-FREQUENCY-SPUTTERED STRONTIUM-TITANATE THIN-FILMS [J].