SYNTHESIS OF NOVEL SR SOURCES FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SRTIO3

被引：57

作者：

KIMURA, T ^{[1
]}

YAMAUCHI, H ^{[1
]}

MACHIDA, H ^{[1
]}

KOKUBUN, H ^{[1
]}

YAMADA, M ^{[1
]}

机构：

[1] TRI CHEM LAB INC,KANAGAWA 24303,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

SRTIO3; MOCVD; SR SOURCE; SR(DPM)2; AMINE; ADDUCT; TRIETHYLENETETRAMINE; TETRAETHYLENEPENTAMINE; SR(DPM)(2)-TRIEN(2); SR(DPM)(2)-TETRAEN(2);

D O I：

10.1143/JJAP.33.5119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Novel Sr source materials for metalorganic chemical vapor deposition (MOCVD) of SrTiO3 have been developed. They were synthesized by adding amine, triethylenetetramine (trien) or tetraethylenepentamine (tetraen), to bis-dipivaloylmethanato strontium (Sr(DPM)(2), or strontium-bis-2,2,6,6-tetramethyl-3,5-heptanedionate). The new sources, Sr(DPM)(2)-trien(2) and Sr(DPM)(2)-tetraen(2), have a low melting point (43-75 degrees C), and are liquid in phase when they are vaporized at 120-130 degrees C. SrTiO3 thin films were prepared on Pt/Ta/SiO2/Si substrates by MOCVD using the new Sr sources. The dielectric constant of films prepared with Sr(DPM)(2)-trien(2) was 215 for 125 nm thick SrTiO3 films, and leakage current densities were below 10(-6) A/cm(2) at 1.5 V for 80 nm thick SrTiO3 films. The new Sr sources did not change in quality after 20-time heat cycles between room temperature and 130 degrees C in Ar atmosphere at 40 Torr.

引用

页码：5119 / 5124

页数：6

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