Preparation of semiconductive epitaxial BaTiO3 thin film and its electrical properties

被引：6

作者：

Hioki, T

Funakubo, H

Sakurai, O

Shinozaki, K

Mizutani, N

机构：

[1] Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, Megro-ku, Tokyo 152, 2-12-1, O-okayama

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1996年 / 104卷 / 01期

关键词：

semiconductive; BaTiO3; electrical property; MOCVD; epitaxial;

D O I：

10.2109/jcersj.104.75

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Submicron semiconductive epitaxial BaTiO3 thin film was prepared on (100) MgO substrate. An epitaxially grown BaTiO3 him prepared by MOCVD was coated with ethanol solution of LaCl3 and heated under a reducing atmosphere at 800-1200 degrees C. The resistivity was less than 1 Omega . cm and the carrier concentration was in the order of 10(18) cm(-3). The film was n-type semiconductor and the resistivity increased abruptly with the increase in temperature above 600 degrees C in air because of the decrease of the carrier concentration.

引用

页码：75 / 77

页数：3

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