Investigation of self-heating phenomenon in small geometry vias using scanning joule expansion microscopy

被引：10

作者：

Banerjee, K ^{[1
]}

Wu, GH ^{[1
]}

Igeta, M ^{[1
]}

Amerasekera, A ^{[1
]}

Majumdar, A ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Dept Elect Engn, Stanford, CA 94305 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761629

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper reports the use of a novel thermometry technique, scanning Joule expansion microscopy (SJEM), to study the steady state and dynamic thermal behavior of small geometry vias under sinusoidal and pulsed current stress for the first time. Spatial distribution of temperature rise surrounding a sub-micron via has been determined and the corresponding temperature contour image has been extracted. The thermal time constant of the via structure has been determined from the measured AC frequency dependence of the temperature rise. Furthermore, the average (PC) and peak temperature rise under pulsed stress condition has been estimated from the measured first harmonic temperature rise.

引用

页码：297 / 302

页数：6

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