InAs1-ySby single crystals with cutoff wavelength of 8-12 μm grown by a new method

InAsSb crystals with a cutoff wavelength of 8-12 mu m and a thickness of greater than 100 mu m have been successfully grown on (100) InAs and GaAs substrates using a new method named melt epitaxy (ME), which is distinct from liquid phase epitaxy (LPE) and current growth technologies such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelengths (defined at the mid-transmittance) are 8.3 mu m, 9.5 mu m, 10.5 mu m, 11 mu m and 12.5 mu m for epilayers with different compositions. X-ray diffraction measurements confirmed that the samples grown on InAs substrates are single crystals. Van der Pauw measurements showed that room temperature electron mobility as high as 5.57 x 10(4) cm(2)/Vs with a carrier density of 2.50 x 10(16) cm(-3) has been achieved, indicating the high quality of the grown layers and potential applications for infrared detectors in this wavelength range.