Plasma beam deposited amorphous hydrogenated carbon: Improved film quality at higher growth rate

被引:53
作者
Gielen, JWAM
vandeSanden, MCM
Schram, DC
机构
[1] Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven
关键词
D O I
10.1063/1.116904
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality diamondlike a-C:H has been deposited, at low ion bombardment energies, from an expanding thermal argon/acetylene plasma at high growth rate, it is observed that quality improvement, in terms of hardness, is equivalent to maximization of the refractive index. The highest refractive indices are obtained when the admired acetylene flow and the argon ion flux emanating from the plasma source are comparable in magnitude, which suggests critical loading. This also indicates that the acetylene has to be dissociated only once. Combination with the observed quality behavior at higher deposition rates suggests that there is one preferred hydrocarbon radical for deposition, probably C2H. (C) 1996 American Institute of Physics.
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页码:152 / 154
页数:3
相关论文
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