SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering

被引：8

作者：

Jelenkovic, EV

Tong, KY ^{[1
]}

Cheung, WY

Wong, SP

Shi, BR

Pang, GKH

机构：

[1] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Univ Sci & Technol, Mat Characterisat & Preparat Facil, Hong Kong, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 02期

关键词：

junction diode; SiGe; magnetron sputtering;

D O I：

10.1016/j.sse.2005.12.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiGe films were deposited and in situ doped by RF-magnetron co-sputtering on oxidized and bare silicon wafers. Post-deposition annealing was done in the temperature range from 580 to 950 degrees C. Structural and compositional characterization was performed by XRD, Raman, TEM and XPS analysis. Electrical properties were obtained by four-point probe measurements on SiGe films, and current-voltage measurements on SiGe(p(+))-Si(n) diode structures. Excellent rectifying properties of SiGe-Si diodes were observed, and the conduction current mechanisms at different annealing temperatures were discussed. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：199 / 204

页数：6

共 28 条

[1]

ASHBURN P, 2003, SIGE HETEROJUNCTION, P116

[2] A DEEP LEVEL TRANSIENT SPECTROSCOPY COMPARISON OF ION-BEAM SPUTTER DEPOSITION DEFECTS IN HIGH AND LOW-TEMPERATURE ANNEALED N-SI SUBSTRATES [J].