Properties of crystallized Si1-xGex thin films deposited by sputtering

被引：46

作者：

Jelenkovic, EV

Tong, KY

Sun, Z

Mak, CL

Cheung, WY

机构：

[1] HONG KONG POLYTECH UNIV, DEPT APPL PHYS, HONG KONG, HONG KONG

[2] CHINESE UNIV HONG KONG, DEPT ELECT ENGN, HONG KONG, HONG KONG

[3] CHINESE UNIV HONG KONG, MAT TECHNOL RES CTR, HONG KONG, HONG KONG

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.580836

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si1-xGex were deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550 degrees C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGex films by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGex films can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGex films was deduced from the recorded XRD and Raman spectra. (C) 1997 American Vacuum Society. [S0734-2101(97)02706-1].

引用

收藏

页码：2836 / 2841

页数：6

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