POLYCRYSTALLINE SILICON-GERMANIUM THIN-FILM TRANSISTORS

被引：73

作者：

KING, TJ

SARASWAT, KC

机构：

[1] Department of Electrical Engineering, Stanford University, Stanford

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 09期

关键词：

D O I：

10.1109/16.310109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of p- and n-channel MOS thin-film transistors (TFT's) in polycrystalline silicon-germanium (poly-Si1-xGex) films is described, and their electrical characteristics are presented. Various technological issues are then addressed in order to provide direction for further work in optimizing the fabrication process. The initial devices fabricated in this work exhibit well behaved electrical characteristics; enhanced performance is expected to accompany improvements in the crystallization and defect-passivation processes. Compared to a poly-Si TFT technology, an optimized poly-Si1-xGe(x) TFT technology may ultimately be able to provide a lower-temperature, shorter-time processing capability at little expense to device performance and it is therefore promising for large-area electronics applications.

引用

收藏

页码：1581 / 1591

页数：11

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