CRYSTALLIZATION PROCESS OF AMORPHOUS MIXED SIXGE1-X THIN-FILMS

被引：4

作者：

BENDAYAN, M

BESERMAN, R

EDELMAN, F

KOMEM, Y

IYER, SS

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL

[3] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90707-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mixed SixGe1-x amorphous thin films have been recrystallized by laser annealing and studied by Raman scattering. The results have been correlated with the results obtained by thermal annealing and characterized by X-ray diffraction. The recrystallization process is explained by assuming that clusters of Si (Ge) tend to form when the material is illuminated, as a result of the difference in binding energy between Si-Si and Ge-Ge.

引用

页码：489 / 493

页数：5

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