RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296

[2] ALONSO MC, UNPUB

[3] GROWTH OF SI1-XGEX ON SILICON BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4445 - 4449

[4] OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS [J]. REVIEWS OF MODERN PHYSICS, 1975, 47 : S1 - S179

[5] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[6] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[7] RAMAN-SCATTERING IN GE-SI ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 253 - 257

[8] CARDONA M, 1982, TOP APPL PHYS, V50, P19

[9] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[10] HANSEN M, 1958, CONSTITUTION BINARY, P774

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296

[2] ALONSO MC, UNPUB

[3] GROWTH OF SI1-XGEX ON SILICON BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4445 - 4449

[4] OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS [J]. REVIEWS OF MODERN PHYSICS, 1975, 47 : S1 - S179

[5] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[6] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[7] RAMAN-SCATTERING IN GE-SI ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 253 - 257

[8] CARDONA M, 1982, TOP APPL PHYS, V50, P19

[9] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[10] HANSEN M, 1958, CONSTITUTION BINARY, P774