RAMAN-SCATTERING IN GE-SI ALLOYS

被引:182
作者
BRYA, WJ [1 ]
机构
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
关键词
D O I
10.1016/0038-1098(73)90692-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:253 / 257
页数:5
相关论文
共 12 条
[1]  
ASHKIN M, 1969, B AM PHYS SOC, V14, P343
[2]   INFRARED ABSORPTION OF LATTICE MODES AND SILICON LOCAL MODE IN GEXSI1-X ALLOYS [J].
COSAND, AE ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5241-&
[3]   THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&
[4]   VIBRATIONS OF AN ATOM OF DIFFERENT MASS IN A CUBIC CRYSTAL [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 273 (1352) :222-+
[5]   RAMAN SCATTERING BY LOCAL MODES IN GERMANIUM-RICH SILICON-GERMANIUM ALLOYS [J].
FELDMAN, DW ;
ASHKIN, M ;
PARKER, JH .
PHYSICAL REVIEW LETTERS, 1966, 17 (24) :1209-&
[6]  
LEFEVER R, TO BE PUBLISHED
[7]  
LOGAN RA, 1964, PHYS REV A-GEN PHYS, V136, P1751
[8]  
Maradudin AA, 1966, SOLID STATE PHYS, V18, P273
[9]   RAMAN SCATTERING BY SILICON AND GERMANIUM [J].
PARKER, JH ;
FELDMAN, DW ;
ASHKIN, M .
PHYSICAL REVIEW, 1967, 155 (03) :712-&
[10]   VOLUME DEPENDENCE OF RAMAN FREQUENCIES OF GE-SI ALLOYS [J].
RENUCCI, JB ;
RENUCCI, MA ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (19) :1651-&