RAMAN SCATTERING BY SILICON AND GERMANIUM

被引：555

作者：

PARKER, JH

FELDMAN, DW

ASHKIN, M

机构：

来源：

PHYSICAL REVIEW | 1967年 / 155卷 / 03期

关键词：

D O I：

10.1103/PhysRev.155.712

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：712 / &

共 13 条

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[6]

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[10] RAMAN EFFECT IN CRYSTALS [J].

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