GROWTH OF SI1-XGEX ON SILICON BY LIQUID-PHASE EPITAXY

被引:30
作者
ALONSO, MI
BAUSER, E
机构
关键词
D O I
10.1063/1.339083
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4445 / 4449
页数:5
相关论文
共 22 条
[1]  
APPEL WH, 1985, THESIS U STUTTGART
[2]   SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
BAUSER, E ;
FRIK, M ;
LOECHNER, KS ;
SCHMIDT, L ;
ULRICH, R .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153
[3]   PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
SHENG, TT ;
FELDMAN, LC ;
FIORY, AT ;
LYNCH, RT .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104
[4]  
BEAN JC, 1985, MATER RES SOC S P, V37, P245
[5]   INSTABILITY OF SLOW SOLID-LIQUID INTERFACE RELAXATION BEFORE THE HETERO-LPE OF III-V COMPOUNDS [J].
BOLKHOVITYANOV, YB ;
CHIKICHEV, SI .
CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (07) :847-857
[7]  
Castaing R., 1963, XRAY OPTICS XRAY MIC, P263
[8]   RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].
CERDEIRA, F ;
PINCZUK, A ;
BEAN, JC ;
BATLOGG, B ;
WILSON, BA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140
[9]  
DISMUKES JP, 1964, J PHYS CHEM, V68, P302
[10]  
ILEGEMS M, 1969, GALLIUM ARSENIDE, P3