Reply to "Comment on 'Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices'"

被引：10

作者：

Gao, Shuang ^{[1
]}

Song, Cheng ^{[1
]}

Chen, Chao ^{[1
]}

Zeng, Fei ^{[1
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 22期

关键词：

IN-SITU OBSERVATION;

D O I：

10.1021/jp401828m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

引用

收藏

页码：11881 / 11882

页数：2

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