Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

被引：654

作者：

Liu, Qi ^{[1
]}

Sun, Jun ^{[2
]}

Lv, Hangbing ^{[1
]}

Long, Shibing ^{[1
]}

Yin, Kuibo ^{[1
,2
]}

Wan, Neng ^{[2
]}

Li, Yingtao

Sun, Litao ^{[2
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

[2] Southeast Univ, Minist Educ, MEMS, Key Lab,SEU FEI Nanopico Ctr, Nanjing 210096, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 14期

关键词：

nonvolatile memory; resistive switching; in situ TEM; conductive filament; solid-electrolyte insulator; RESISTIVE SWITCHING MEMORIES; SOLID-ELECTROLYTE; DEVICES; RESISTANCE; MECHANISMS;

D O I：

10.1002/adma.201104104

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

收藏

页码：1844 / 1849

页数：6

相关论文

共 33 条

[1]

The Atomic Switch [J].

Aono, Masakazu ;

Hasegawa, Tsuyoshi .

PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2228-2236

[2]

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch [J].

Banno, Naoki ;

Sakamoto, Toshitsugu ;

Iguchi, Noriyuki ;

Sunamura, Hiroshi ;

Terabe, Kazuya ;

Hasegawa, Tsuyoshi ;

Aono, Masakazu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :3283-3287

[3]

Chen L., 2009, APPL PHYS LETT, V94

[4]

Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices [J].

Cho, Byungjin ;

Yun, Jin-Mun ;

Song, Sunghoon ;

Ji, Yongsung ;

Kim, Dong-Yu ;

Lee, Takhee .

ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (20) :3976-3981

[5]

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory [J].

Choi, Sang-Jun ;

Park, Gyeong-Su ;

Kim, Ki-Hong ;

Cho, Soohaeng ;

Yang, Woo-Young ;

Li, Xiang-Shu ;

Moon, Jung-Hwan ;

Lee, Kyung-Jin ;

Kim, Kinam .

ADVANCED MATERIALS, 2011, 23 (29) :3272-+

[6]

A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control [J].

Dietrich, Stefan ;

Angerbauer, Michael ;

Ivanov, Milena ;

Gogl, Dietmar ;

Hoenigschmid, Heinz ;

Kund, Michael ;

Liaw, Corvin ;

Markert, Michael ;

Symanczyk, Ralf ;

Altimime, Laith ;

Bournat, Serge ;

Mueller, Gerhard .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (04) :839-845

[7]

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching [J].

Fujii, Takashi ;

Arita, Masashi ;

Takahashi, Yasuo ;

Fujiwara, Ichiro .

APPLIED PHYSICS LETTERS, 2011, 98 (21)

[8]

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices [J].

Fujiwara, Kohei ;

Nemoto, Takumi ;

Rozenberg, Marcelo J. ;

Nakamura, Yoshinobu ;

Takagi, Hidenori .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) :6266-6271

[9]

Nonpolar nonvolatile resistive switching in Cu doped ZrO2 [J].

Guan, Weihua ;

Long, Shibing ;

Liu, Qi ;

Liu, Ming ;

Wang, Wei .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :434-437

[10]

Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems [J].

Guo, Xin ;

Schindler, Christina .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

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