Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

被引:112
作者
Banno, Naoki [1 ]
Sakamoto, Toshitsugu [1 ]
Iguchi, Noriyuki [2 ]
Sunamura, Hiroshi [3 ]
Terabe, Kazuya [4 ]
Hasegawa, Tsuyoshi [4 ]
Aono, Masakazu [4 ]
机构
[1] NEC Corp Ltd, Device Platforms Res Labs, Sagamihara, Kanagawa 2291198, Japan
[2] NEC Corp Ltd, Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] NEC Elect Corp, LSI Fundamental Res Lab, Sagamihara, Kanagawa 2291198, Japan
[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
关键词
Electrochemical devices; ions; programmable logic device; switches;
D O I
10.1109/TED.2008.2004246
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (V-ON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that V-ON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and V-ON, we replaced the former electrolyte, Cu2-alpha S, with Ta2O5, which enabled us to appropriately adjust V-ON with a smaller Cu+ ion diffusion coefficient.
引用
收藏
页码:3283 / 3287
页数:5
相关论文
共 16 条
[1]   COPPER ELECTROMIGRATION IN POLYCRYSTALLINE COPPER SULFIDE [J].
ALLEN, LH ;
BUHKS, E .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :327-335
[2]  
[Anonymous], 2006, Proceedings of the 2006 ACM/SIGDA 14th International Symposium on Field Programmable Gate Arrays, FPGA '06
[3]  
BANNO N, 2008, P INT REL PHYS S, P707
[4]   POLARITY-DEPENDENT MEMORY SWITCHING AND BEHAVIOR OF AG DENDRITE IN AG-PHOTODOPED AMORPHOUS AS2S3 FILMS [J].
HIROSE, Y ;
HIROSE, H .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2767-2772
[5]   A nonvolatile programmable solid-electrolyte nanometer switch [J].
Kaeriyama, S ;
Sakamoto, T ;
Sunamura, H ;
Mizuno, M ;
Kawaura, H ;
Hasegawa, T ;
Terabe, K ;
Nakayama, T ;
Aono, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :168-176
[6]  
KOZICKI MN, 2002, P SIL NAN WORKSH, P51
[7]   DIFFUSION OF METALS IN SILICON DIOXIDE [J].
MCBRAYER, JD ;
SWANSON, RM ;
SIGMON, TW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1242-1246
[8]   ELECTRICAL-CONDUCTION AND PHASE-TRANSITION OF COPPER SULFIDES [J].
OKAMOTO, K ;
KAWAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) :1130-1138
[9]   A nonvolatile programmable solid electrolyte nanometer switch [J].
Sakamoto, T ;
Kaeriyama, S ;
Sunamura, H ;
Mizuno, M ;
Kawaura, H ;
Hasegawa, T ;
Terabe, K ;
Nakayama, T ;
Aono, M .
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :290-291
[10]   Nanometer-scale switches using copper sulfide [J].
Sakamoto, T ;
Sunamura, H ;
Kawaura, H ;
Hasegawa, T ;
Nakayama, T ;
Aono, M .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3032-3034