Nanometer-scale switches using copper sulfide

被引:481
作者
Sakamoto, T
Sunamura, H
Kawaura, H
Hasegawa, T
Nakayama, T
Aono, M
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
[3] Osaka Univ, Suita, Osaka 5650871, Japan
关键词
D O I
10.1063/1.1572964
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 mus. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching. (C) 2003 American Institute of Physics.
引用
收藏
页码:3032 / 3034
页数:3
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