A nonvolatile programmable solid-electrolyte nanometer switch

被引：166

作者：

Kaeriyama, S ^{[1
]}

Sakamoto, T

Sunamura, H

Mizuno, M

Kawaura, H

Hasegawa, T

Terabe, K

Nakayama, T

Aono, M

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Corp Ltd, Fundamental & Environm Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] Japan Sci & Technol Agcy JST, Kawaguchi, Saitama 3320003, Japan

[4] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 01期

关键词：

crossbar switch; FPGA; nonvolatile memory; reconfigurable logic; solid electrolyte switch;

D O I：

10.1109/JSSC.2004.837244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a reconfigurable LSI employing a nonvolatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ohm on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 x 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-mum CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.

引用

页码：168 / 176

页数：9

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