Nonpolar nonvolatile resistive switching in Cu doped ZrO2

被引：243

作者：

Guan, Weihua ^{[1
]}

Long, Shibing ^{[1
]}

Liu, Qi ^{[1
]}

Liu, Ming ^{[1
]}

Wang, Wei ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12222 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Cu doping; nonvolatile memory (NVM); resistive random access memory (ReRAM); resistive switching; ZrO2;

D O I：

10.1109/LED.2008.919602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the unique reproducible nonpolar resistive switching behavior is reported in the Cu-doped ZrO2 memory devices. The devices are with the sandwiched structure of Cu/ZrO2:Cu/Pt. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias and can be achieved under both voltage sweeping and voltage pulse. The ratio between the high and low resistance is on the order of 10(6). Set and Reset operation in voltage pulse mode can be as fast as 50 and 100 us, respectively. No data loss is found upon continuous readout for more than 10(4) s. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is believed to be related with the formation and rupture of conducting filamentary paths.

引用

页码：434 / 437

页数：4

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