Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

被引:184
作者
Guan, Weihua [1 ]
Long, Shibing [1 ]
Jia, Rui [1 ]
Liu, Ming [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Lab Nano Fabricat & Novel Devices Integrated Tech, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2760156
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resistive switching characteristics of ZrO2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ZrO2 (with nc-Au embedded)/n(+) Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in ZrO2 films can improve the device yield greatly. ZrO2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.
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页数:3
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