Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications

被引：182

作者：

Lai, YS ^{[1
]}

Tu, CH

Kwong, DL

Chen, JS

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 12期

关键词：

D O I：

10.1063/1.2051801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various resistance states can be made by controlling the on-state current through the PVK films. The resistance of the on-state PVK films also affects the turn-off current, which needs to erase the on state. The filament theory is used to elucidate the observed phenomenon. We demonstrate that the PVK films exhibit good retention and stable "read-write-read-erase" cyclic switching characteristics. The PVK films also show a good switching behavior with on-off ratio of 10(4), which will be a potential material for nonvolatile memory application. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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