Effect of top electrode material on resistive switching properties of ZrO2 film memory devices

被引：283

作者：

Lin, Chih-Yang ^{[1
]}

Wu, Chen-Yu

Wu, Chung-Yi

Lee, Tzyh-Cheang

Yang, Fu-Liang

Hu, Chenming

Tseng, Tseung-Yuen

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

关键词：

nonvolatile memory; resistive random access memory (RRAM); resistive switching; ZrO2;

D O I：

10.1109/LED.2007.894652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of top electrode material on the resistive switching properties of ZrO2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I-V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.

引用

页码：366 / 368

页数：3

共 12 条

[1]

Baek IG, 2005, INT EL DEVICES MEET, P769

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3] High-speed resistive switching of TiO2/TiN nano-crystalline thin film [J].

Fujimoto, M ;

Koyama, H ;

Hosoi, Y ;

Ishihara, K ;

Kobayashi, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L310-L312

[4] TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching [J].

Fujimoto, Masayuki ;

Koyama, Hiroshi ;

Konagai, Masashi ;

Hosoi, Yasunari ;

Ishihara, Kazuya ;

Ohnishi, Shigeo ;

Awaya, Nobuyoshi .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[5] Formation of (111) nanotwin lamellae hillocks in polycrystalline silicon thin films caused by deposition of silicon dioxide layer [J].

Imai, S ;

Fujimoto, M .

APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3

[6] Improvement of resistive memory switching in NiO using IrO2 [J].

Kim, D. C. ;

Lee, M. J. ;

Ahn, S. E. ;

Seo, S. ;

Park, J. C. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[7] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications [J].

Lee, D ;

Choi, H ;

Sim, H ;

Choi, D ;

Hwang, H ;

Lee, MJ ;

Seo, SA ;

Yoo, IK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :719-721

[8] Resistive switching mechanisms of V-doped SrZrO3 memory films [J].

Lin, Chun-Chieh ;

Tu, Bing-Chung ;

Lin, Chao-Cheng ;

Lin, Chen-Hsi ;

Tseng, Tseung-Yuen .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :725-727

[9] Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film [J].

Liu, CY ;

Wu, PH ;

Wang, A ;

Jang, WY ;

Young, JC ;

Chiu, KY ;

Tseng, TY .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :351-353

[10] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

← 1 2 →