Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

被引：154

作者：

Lee, D ^{[1
]}

Choi, H ^{[1
]}

Sim, H ^{[1
]}

Choi, D ^{[1
]}

Hwang, H ^{[1
]}

Lee, MJ ^{[1
]}

Seo, SA ^{[1
]}

Yoo, IK ^{[1
]}

机构：

[1] SAIT, Suwon 440600, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

关键词：

n-MOSFET; nonstoichiometric zirconium oxide; resistance random access memory (RAM); resistive switching; switching mechanism; tri-layer structure;

D O I：

10.1109/LED.2005.854397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO chi/p(+)-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrO chi thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO2 layer with high resistance, transition region with medium resistance, and conducting ZrO chi bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr+ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.

引用

页码：719 / 721

页数：3

共 20 条

[1] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].