Improved metal-oxide-nitride-oxide-silicon-type flash device with high-k dielectrics for blocking layer

被引：50

作者：

Choi, S

Cho, M

Hwang, H

Kim, JW

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Gwangju 500712, South Korea

[2] Samsung Adv Inst Technol, M D Lab, Suwon 440600, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 08期

关键词：

D O I：

10.1063/1.1609650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated a sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal-oxide-nitride-oxide-silicon capacitors. Compared with a SiO2 blocking layer, the sample with Al2O3/HfO2 stack shows lower write/erase (W/E) voltage, higher speed, and longer data retention time. The improvement of electrical characteristics can be explained by lower leakage current density and less voltage drop of high-k blocking layer which in turn increase the effective thickness of tunneling oxide. After stressing the W/E voltage of +/-10 V voltage for 1 ms, the flat-band voltage shift of 4 V and 10 years of retention time was obtained. (C) 2003 American Institute of Physics.

引用

页码：5408 / 5410

页数：3

共 15 条

[1] Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor structures [J].

Bachhofer, H ;

Reisinger, H ;

Bertagnolli, E ;

von Philipsborn, H .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2791-2800

[2] Design considerations in scaled SONOS nonvolatile memory devices [J].

Bu, JK ;

White, MH .

SOLID-STATE ELECTRONICS, 2001, 45 (01) :113-120

[3]

Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863

[4] PLATINUM BOTTOM ELECTRODES FORMED BY ELECTRON-BEAM EVAPORATION FOR HIGH THIN-FILMS [J].

CHA, SY ;

LEE, HC ;

LEE, WJ ;

KIM, HG .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5220-5223

[5]

Cho MK, 2000, IEEE ELECTR DEVICE L, V21, P399

[6] DESIGN AND SCALING OF A SONOS MULTIDIELECTRIC DEVICE FOR NONVOLATILE MEMORY APPLICATIONS [J].

FRENCH, ML ;

CHEN, CY ;

SATHIANATHAN, H ;

WHITE, MH .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (03) :390-397

[7]

LEE C, 2002, P C SOL STAT DEV MAT, P162

[8] High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode [J].

Lee, SJ ;

Luan, HF ;

Bai, WP ;

Lee, CH ;

Jeon, TS ;

Senzaki, Y ;

Roberts, D ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :31-34

[9] CHARGE TRANSPORT AND STORAGE OF LOW PROGRAMMING VOLTAGE SONOS MONOS MEMORY DEVICES [J].

LIBSCH, FR ;

WHITE, MH .

SOLID-STATE ELECTRONICS, 1990, 33 (01) :105-126

[10] Local transport and trapping issues in Al2O3 gate oxide structures [J].

Ludeke, R ;

Cuberes, MT ;

Cartier, E .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2886-2888

← 1 2 →