Resistive switching in metal-ferroelectric-metal junctions

被引：269

作者：

Contreras, JR

Kohlstedt, H

Poppe, U

Waser, R

Buchal, C

Pertsev, NA

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 22期

关键词：

D O I：

10.1063/1.1627944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabricated on lattice-matched SrTiO3 substrates. The current-voltage (I-V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr0.52Ti0.48)O-3 barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I-V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. (C) 2003 American Institute of Physics.

引用

页码：4595 / 4597

页数：3

共 20 条

[1] Reproducible switching effect in thin oxide films for memory applications [J].