TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

被引：190

作者：

Fujimoto, Masayuki

Koyama, Hiroshi

Konagai, Masashi

Hosoi, Yasunari

Ishihara, Kazuya

Ohnishi, Shigeo

Awaya, Nobuyoshi

机构：

[1] Shizuoka Univ, Grad Sch Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[3] Sharp Co Ltd, Fukuyama, Hiroshima 7218522, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2397006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A TiO2 anatase layer of about 2.5 nm thick on TiN thin film was characterized by high-resolution scanning transmission electron microscopy. The results suggested that the high-speed resistive change was derived from the Mott transition in the TiO2 anatase nanolayer, and the obtained results could relate to the formation of filament paths previously reported in binary transition metal oxide thin films exhibiting resistive switching. (c) 2006 American Institute of Physics.

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