Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches -: art. no. 172107

被引：62

作者：

Dong, R ^{[1
]}

Wang, Q ^{[1
]}

Chen, LD ^{[1
]}

Shang, DS ^{[1
]}

Chen, TL ^{[1
]}

Li, XM ^{[1
]}

Zhang, WQ ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 17期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1915529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Materials showing reversible resistance switching at room temperature are attractive for today's semiconductor technology with its wide interest in nonvolatile random access memories. In this letter, the retention behavior of the electric-pulse-induced reversible (EPIR) resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches was demonstrated. The results suggest that the retention property of the EPIR materials depends on both the resistance states and the resistance switching history, and it can be modified using the proper modes of applied electric pulse. (c) 2005 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 16 条

[1] Electric-pulse-induced reflectance change in the thin film of perovskite manganite [J].

Aoyama, K ;

Waku, K ;

Asanuma, A ;

Uesu, Y ;

Katsufuji, T .

APPLIED PHYSICS LETTERS, 2004, 85 (07) :1208-1210

[2] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[3] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[4] Resistive switching in metal-ferroelectric-metal junctions [J].

Contreras, JR ;

Kohlstedt, H ;

Poppe, U ;

Waser, R ;

Buchal, C ;

Pertsev, NA .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597

[5] Fatigue behavior of the electric pulse induced reversible resistance change effect in AgLa0.7Ca0.3MnO3Pt sandwich [J].

Dong, R ;

Wang, Q ;

Chen, L ;

Chen, T ;

Li, X .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (01) :13-16

[6] THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].

JIN, S ;

TIEFEL, TH ;

MCCORMACK, M ;

FASTNACHT, RA ;

RAMESH, R ;

CHEN, LH .

SCIENCE, 1994, 264 (5157) :413-415

[7]

Liu LH, 2001, MRS INTERNET J N S R, V6, P1

[8] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[9] Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer [J].

Ma, LP ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :4908-4910

[10] VERY LARGE MAGNETORESISTANCE IN PEROVSKITE-LIKE LA-CA-MN-O THIN-FILMS [J].

MCCORMACK, M ;

JIN, S ;

TIEFEL, TH ;

FLEMING, RM ;

PHILLIPS, JM ;

RAMESH, R .

APPLIED PHYSICS LETTERS, 1994, 64 (22) :3045-3047