Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode

被引：140

作者：

Lin, Chih-Yang

Wu, Chung-Yi

Wu, Chen-Yu

Tseng, Tseung-Yuen ^{[1
]}

Hu, Chenming

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 09期

关键词：

D O I：

10.1063/1.2802990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Ti top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as bottom electrode was investigated in the present study. When Ti is used as top electrode, the resistive switching behavior becomes dependent on bias polarity and no current compliance is needed during switching into high conducting state. This phenomenon is attributed to the fact that a series resistance between Ti and ZrO2 film, composed of a TiOx layer, a ZrOy layer, and even the contact resistance, imposed a current compliance on the memory device. Besides, our experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state is a current driven process. (c) 2007 American Institute of Physics.

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页数：5

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